piezoresistive effect

Study on the Piezoresistive Effect in P type Diamond Films

P型金刚石薄膜压阻效应的理论研究

Study on Carbon Nanotube Film 's Piezoresistive Effect and Related Mechanical Properties

碳纳米管膜的压阻效应及其相关力学性质研究

Current Status of R D on Piezoresistive Effect in Diamond Films

金刚石薄膜压阻效应研究现状

Pressure sensor based on transverse piezoresistive effect of silicon

利用硅横向压阻效应的压力敏感器件

The Influence of Polysilicon Thin Film Crystal Structure Upon the Film Piezoresistive Effect

多晶硅薄膜晶体结构对薄膜压阻效应的影响

Piezoresistive Effect of Conductive Polymer Films Based on Carbon Nanotubes

基于碳纳米管高分子导电膜的压阻效应

Pressure sensor made by micro-machining technology and based on the semiconductor piezoresistive effect .

压力传感器利用的是半导体的压阻效应，通过微机械加工技术制作而成。

The piezoresistive effect is degraded with increasing micro - defects .

压阻效应随微缺陷增多而降低。

Correlation between shape of electric admixtures and piezoresistive effect of cement based composite materials

导电掺和料形态与水泥基材料压敏性的相关性

Piezoresistive Effect of Polysilicon Films at High Temperature

多晶硅薄膜的高温压阻效应

Using piezoresistive effect , we focused on constant current and constant voltage source power supply power supply analysis .

根据压阻效应原理，对恒流源供电和恒压源供电方式进行理论分析。

The probe of the sensor is made of single-crystal silicon Piezoresistive effect principle .

传感器的探头是利用单晶硅的压阻效应原理制成的。

The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films .

实验结果表明碳纳米管膜有显著的压阻效应。最后讨论了碳纳米管膜形成压阻效应的原因。

The phenomenon that the resistivity of the composites changes with the pressure is called piezoresistive effect .

压阻效应即材料的电阻率随着外界所施加压力的变化而发生变化的现象。

They are based on the principle of silicon piezoresistive effect , mobility change , and variable capacitance respectively .

各部分分别基于半导体压阻效应、电阻迁移率变化、极板间电容变化为原理制作而成。

The study of MEMS devices based on the piezoresistive effect of silicon has several ten years history with widely applications .

基于硅材料压阻效应的微机电系统器件研究已经有几十年的历史，并被广泛地应用。

The meso-piezoresistive effect is presented and its sensitivity is one order higher than that of silicon piezoresistive effect .

介绍了介观压阻效应，其灵敏度比硅压阻效应高一个数量级。

Based on the piezoresistive effect in single crystal and polycrystalline silicon , the parameterized behavioral model of piezoresistor is established .

依据单晶硅和多晶硅的压阻效应，并考虑压阻系数随温度、掺杂浓度的影响，可建立压敏电阻的参数化组件模型；

According to the valence bands split model and F-S thin film theory , a calculation formula of piezoresistive effect has been presented .

在价带分裂模型和F-S理论的基础上，导出了金刚石膜压阻效应的理论计算公式。

Diameter-dependent piezoresistive effect of multi-walled carbon nanotube films

管径相关的多壁碳纳米管膜的压阻效应

The piezoresistive effect of N-silicon at the [ 100 ] direction is analysed theoretically by means of the multi-valley 's model of band structure .

本文应用能带结构的多谷模型，对N型硅在[100]方向的压阻效应进行了理论分析。

HDPE / GN nanocomposite exhibits strong piezoresistive effect owing to the lower percolation threshold and the intensive orientation of GN in the composite .

由于体系渗滤阈值低，纳米石墨导电微片在复合材料中的含量较少，因此HDPE/GN复合材料具有较强的压阻效应。

Piezoresistive effect of semiconductor piezoresistive tensor and the piezoresistive coefficient are studied . MEMS cantilever bending force is analyzed , and the location of the varistor is design .

研究了半导体的压阻效应、压阻张量、压阻系数，进而对MEMS悬臂梁进行了受力弯曲分析，分析压敏电阻的设计位置。

However , the study of its piezoresistive effect is quite rare . As a candidate for the active strain elements in high-temperature environment , it has received some attention abroad and new researches are being carried out .

作为一种能被用于高温的压阻材料，国外对其压阻效应已经有了足够的重视，新的研究还在不断地展开，但是国内对此的研究还相当少。

Based on the principle of silicon piezoresistive effect and the stress distribution formula of the square silicon diaphragm , some important measures must be take to increase the sensitivity of the square silicon diaphragm piezoresistive pressure transducers .

结合扩散硅压阻式压力传感器的研制.根据硅的压阻效应原理，利用方形硅膜的应力分布公式，论述了提高正方形硅膜压阻式压力传感器灵敏度的几个重要措施。

The two types of innovative structure of flexible multi-dimensional array tactile sensor are developed , one is overall multi-layer net array structure based on body piezoresistive effect , and the other is single-layer array structure based on interface piezoresistive effect .

研制了两种具有创新型结构的柔性多维阵列触觉传感器，一为基于体压阻效应的整体多层网状阵列结构，另一为基于界面压阻效应的单层阵列结构。

The structure is based on piezoresistive effect of GaAs PHEMT structure . The drain current output of PHEMT changes when the mass receives force . And then the force signal is converted to electrical signal , and the current change is detected through the external testing circuit .

该结构基于GaAs-PHEMT结构的压阻效应，通过对质量块施加一定的力改变PHEMT结构漏极电流的输出，并通过外围测试电路来检测该电流变化，从而检测力和加速度的大小。